山東力冠微電子裝備

產(chǎn)品展示


HVPE 法單晶生長(zhǎng)設(shè)備 —臥式

適用領(lǐng)域:?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN(單晶)、AIN(單晶/外延)、Ga2O3(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:? 12/8/6 英寸 Wafer Size: 12/8/6? inch

HVPE 法單晶生長(zhǎng)設(shè)備 —立式

適用領(lǐng)域:?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN(單晶)、AIN(單晶/外延)、Ga2O3(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:12/ 8/6 英寸 Wafer Size: 12/8/6 inch

< 1 > 前往 頁(yè)