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?適用領(lǐng)域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：Si3N4 、SiO2等膜層的沉積 Deposition of Si3N4, SiO2, and other film layers
適用領(lǐng)域：集成電路、先進封裝、化合物半導(dǎo)體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch 適用工藝：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、擴散(Diffusion) Applicable Processes: High-Temperature Annealing
適用領(lǐng)域：集成電路、先進封裝、化合物半導(dǎo)體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch 適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.
?適用領(lǐng)域：集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.
? 適用領(lǐng)域： ?集成電路、先進封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ? 適用材料: ?Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ?晶圓尺寸: ?12/8英寸 Wafer Size: 12/8 inch ?適用工藝: ?氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、擴散(Diffusion) Applicable Processes: ?Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion